Drawing: |
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Earlier published in: |
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IEC 60617-5 (ed.2.0) 05-05-14 |
Description (temporary field): |
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Name: |
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Insulated gate field effect transistor IGFET enhancement type, single gate, N-type channel with substrate internally connected to source |
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Transistor à effet de champ à grille isolée IGFET à enrichissement à une seule grille, canal de type N, avec substrat relié intérieurement à la source |
Alternative names: |
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Keywords: |
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enhancement type; field effect transistors; IGFET; insulated gate; N-type channel; semiconductors; transistors |
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canal de type N, champs à grille isolée, enrichissement, IGFET, semiconducteurs, transistors, transistors à effet de champ |
Form: |
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Alternative forms: |
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Applied in: |
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Applies: |
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S00618, S00622, S00624, S00674 |
Application notes: |
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Source references: |
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Published in: |
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Entered on: |
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Evaluated on: |
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Released on: |
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2001-07-01 |
Rejected on: |
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Obsolete from: |
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Proposed by: |
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Replaces: |
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Replaced by: |
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Shape class: |
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Arrows, Lines |
Function class: |
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K Processing signals or information |
Application class: |
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Circuit diagrams |
Symbol restrictions: |
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Remarks: |
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Change requests: |
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C00035 |