Drawing: |
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Earlier published in: |
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IEC 60617-5 (ed.2.0) 05-05-17 |
Description (temporary field): |
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Name: |
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Insulated gate field effect transistor IGFET, depletion type, two gates, P-type channel with substrate connection brought out |
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Transistor à effet de champ à grille isolée IGFET à déplétion à deux grilles, canal de type P, avec substrat connecté séparément |
Alternative names: |
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Keywords: |
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depletion type; field effect transistors; IGFET; insulated gate; P-type channel; semiconductors; transistors |
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canal de type P, champs à grille isolée, déplétion, IGFET, semiconducteurs, transistors, transistors à effet de champ |
Form: |
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Alternative forms: |
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Applied in: |
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Applies: |
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S00617, S00623, S00624, S00678 |
Application notes: |
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A00183 |
Source references: |
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Published in: |
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Entered on: |
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Evaluated on: |
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Released on: |
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2001-07-01 |
Rejected on: |
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Obsolete from: |
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Proposed by: |
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Replaces: |
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Replaced by: |
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Shape class: |
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Arrows, Lines |
Function class: |
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K Processing signals or information |
Application class: |
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Circuit diagrams |
Symbol restrictions: |
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Remarks: |
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Change requests: |
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C00035, C00068 |