Drawing: |
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Earlier published in: |
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IEC 60617-5 (ed.2.0) 05-05-19 |
Description (temporary field): |
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Name: |
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Insulated-gate bipolar transistor (IGBT) enhancement type, N channel |
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Transistor bipolaire à grille isolée (IGBT) de type à enrichissement, canal N |
Alternative names: |
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Keywords: |
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bipolar transistors; enhancement type; IGBT; insulated gate; N-type channel; semiconductors; transistors |
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canal de type N, enrichissement, grille isolée, IGBT, semiconducteurs, transistors, transistors bipolaires |
Form: |
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Alternative forms: |
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Applied in: |
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Applies: |
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S00618, S00624, S00625, S00627, S00631 |
Application notes: |
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Source references: |
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Published in: |
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Entered on: |
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Evaluated on: |
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Released on: |
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2001-07-01 |
Rejected on: |
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Obsolete from: |
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Proposed by: |
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Replaces: |
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Replaced by: |
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Shape class: |
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Arrows, Lines |
Function class: |
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K Processing signals or information |
Application class: |
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Circuit diagrams |
Symbol restrictions: |
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Remarks: |
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Change requests: |
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C00035 |